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Dr.-Ing. Hans J. Scheel - Publications

Publications

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Online-Edition of the Book Elwell&Scheel “Crystal Growth from High-Temperature Solutions” with additional chapter 11 and Appendices

PDF Downloads of the most important publications you find in Section “Crystal Growth” under the corresponding film labels.

List of Publications, Invited Lectures and Seminars

Books

  1. “Crystal Growth from High-Temperature Solutions”, 10 chapters, 634 pages, authors D. Elwell and H. J. Scheel, Academic Press, London - New York, (1975).
  2. “1976 Crystal Growth and Materials” (Vol. 11 of Current Topics in Materials Science), 918 pages, editors E. Kaldis and H. J. Scheel, North-Holland Publ. Comp., Amsterdam - New York, (1977).
  3. “Crystal Growth and Epitaxy”, Proceedings of 34ème Cours de Perfectionnement de l'Association Vaudoise des Chercheurs en Physique “Croissance de Cristaux et de Couches Epitaxiales pour Applications Electroniques et Optiques” (held at Grimentz March 16-21, 1992), 418 pages, editor H. J. Scheel (1993).
  4. “First International School on Crystal Growth Technology : Book of Lecture Notes” (Beatenberg September 5-16, 1998), editor H. J. Scheel, REPRO-EPF Lausanne 1998, 806 pages.
  5. “Crystal Growth Technology”, editors Hans J. Scheel, T. Fukuda, Wiley & Sons, Chichester UK 2003 hardcover, 2004 paperback, 29 chapters, 694 pages.
  6. “Third International Workshop on Crystal Growth Technology: Book of Lecture Notes” (Beatenberg September 10-18, 2005), editor H. J. Scheel, Artworking Beatenberg 2005, 466 pages.
  7. “Crystal Growth Technology – From Fundamentals and Simulation to Large-scale Production”, editors Hans J. Scheel and Peter Capper, Wiley-VCh, Weinheim Germany 2008, 19 chapters, XVI + 483 pages.

Technical Publications

  1. G. Bayer, 0. W. Flörke, W. Hoffmann, and H. J. Scheel : “Entmischung und Kristallisation in Gläsern des Systems Na2O-TiO2-SiO2”, Glastechn. Berichte 39 (1966) p. 242 - 261.
  2. H. Koyama, F. Laves, and H. J. Scheel : “Kristallstrukturen organischer Pigmentfarbstoffe I : γ-Chinacridon C20H12O2N2”, Naturwiss. 53 (1966) p. 700.
  3. K. Ogawa, F. Laves, and H. J. Scheel : “Kristallstrukturen organischer Pigmentfarbstoffe II : 4,4'-Diamino-l,l'-Dianthrachinonyl C28H16N2O4”, Naturwiss. 53 (1966) p. 700-701.
  4. H. J. Scheel : “Crystal Growth of Metastable Quartz Solid Solutions in MgO-Al2O3-SiO2 Glasses”, J. Crystal Growth 2 No. 6 (1968) p. 411-412.
  5. W. Hoffmann and H. J. Scheel : “Ueber die γ- und δ- Modifikationen des Natriumdisilikates, Na2Si2O5”, Zeitschrift für Kristallographie 129 (1969) p. 396-404.
  6. K. Ogawa and H. J. Scheel : “The Structure of 4,4'-Diamino 1,1'Bianthraquinone. C28H16N2O4”, Zeitschrift für Kristallographie 130 (1969) p. 405-419.
  7. H. J. Scheel and E. 0. Schulz-DuBois : “Flux Growth of Large Crystals by Accelerated Crucible-Rotation Technique”, J. Crystal Growth 8 (1971) p. 304-306.
  8. H. J. Scheel : “Lead Feldspar”, Zeitschrift für Kristallographie 133 (1971) p. 264-272.
  9. H. J. Scheel and D. Elwell : “Stable Growth Rates and Temperature Programming in Flux Growth”, J. Crystal Growth 12 (1972) p. 153-161.
  10. H. J. Scheel : “Accelerated Crucible Rotation : A Novel Stirring Technique in High-Temperature Solution Growth”, ICCG-3, Marseille, France, July 5-9, 1971, J. Crystal Growth 13/14 (1972) p. 560-565.
  11. H. J. Scheel and D. Elwell : “Stability and Stirring in Crystal Growth from High-Temperature Solutions”, J. Electrochem. Soc. 120 (1973) No.6, p. 818-824.
  12. J. K. Kjems, G. Shirane, K. A. Müller, and H. J. Scheel : “Soft-Phonon Response Function : Inelastic Neutron Scattering from LaAlO3”, Physical Review B. 8 (1973) p. 1119-1124.
  13. H. J. Scheel and D. Elwell “Surface Features of Flux-Grown Refractory Oxide Crystals”, J. Crystal Growth 20 (1973) No. 4, p. 259-267.
  14. H. J. Scheel and C. West “A Precise Temperature Sensor for 600 - 1600° C”, J. of Physics E Scientific Instruments 6 (1973) No 12, p.1178-1179.
  15. H. J. Scheel : “Crystallization of Sulfides from Alkali Polysulfide Fluxes”, ICCG-4, Tokyo, Japan, March 23-29, 1974 ; J. Crystal Growth 24/25 (1974) p. 669-673.
  16. H. J. Scheel, J.G. Bednorz, and P. Dill : “Crystal Growth of Strontium Titanate SrTiO3” , Third European Meeting on Ferroelectricity EMF-3, Ziirich, Switzerland, September 22-26, 1975, Ferroelectrics 13 (1976) Nos. 1-4, p. 507-509.
  17. H. J. Scheel : “Kristallzüchtung und Charakterisierung von Strontiumtitanat SrTiO3”, Zeitschrift für Kristallographie 143 (1976) p.417-428.
  18. R. M. Hornreich, B. Sharon, and H. J. Scheel : “Critical Behavior of the Principal Magnetoelectric Susceptibilities of GdAlO3”, Phys. Rev. B 16 (1977) No. 3, p. 1112-1116.
  19. J. G. Bednorz and H. J. Scheel : “Flame-Fusion Growth of SrTiO3”, J. Crystal Growth 41 (1977) No 1, p. 5-12.
  20. H. J. Scheel : “A New Technique for Multilayer LPE”, Invited talk at ICCG-5, Boston July 1976, J. Crystal Growth 42 (1977) No. 1, p. 301-308.
  21. H. J. Scheel, “Report on the Second International School on Semiconductor Optoelectronics, May 1978, Poland”, Progress in Crystal Growth & Characterization 1 (1979) p. 421-425, Pergamon Press Ltd., Oxford.
  22. H. Rohrer and H. J. Scheel : “Experimental Verification of Random-Field Critical and Multicritical Behavior”, Phys. Rev. Lett. 44 (1980) No. 13, p. 876-879.
  23. H. J. Scheel and H. Müller-Krumbhaar : “Crystal Pulling Using ACRT”, J. Crystal Growth 49 (1980) No. 2, p. 291-296.
  24. H. J. Scheel : “Transition to Faceting in Multilayer Liquid Phase Epitaxy of GaAs”, Appl. Phys. Lett. 37 (1980) No. 1, p. 70-73.
  25. M. A. Aegerter, H. C. Basso, and H. J. Scheel : “Optical Properties of GdAlO3:Cr++++”, Proceedings of the Internatl. Conference on Laser'80 (December 18, 1980 at New Orleans), Society of Optical and Quantum Electronics (1981) p. 383-390.
  26. J. Hutton, R. J. Nelmes, and H. J. Scheel : “Extinction Corrections for a Highly Perfect Crystal (SrTiO3) ”, Acta Crystallogr. A 37 (1981) p. 916-920
  27. I. H. Brunskill, R. Boutellier, W. Depmeier, H. J. Scheel, and H. Schmid “High-Temperature Solution Growth of Pb(Fe0.5Nb0.5)O3 and Pb(Mn0.5Nb0.5)O3 Crystals”, J. Crystal Growth 56 (1982) p. 541-546.
  28. H. J. Scheel and E. 0. Schulz-DuBois : “The Role of Hydrodynamics in Crystal Growth from High-Temperature Solutions”, Chapter 3.1.4 in “Convective Transport and Instability Phenomena”, Editors J. Zierep and H. Oertel Jr., Braun Verlag, Karlsruhe (1982), p. 491-513.
  29. D. Rytz and H. J. Scheel : “Crystal Growth of KTa1-xNbxO3 (0<x<0.04) Solid Solutions by a Slow-Cooling Method”, J. Crystal Growth 59 (1982) p. 468-484.
  30. H. J. Scheel, G. Binnig and H. Rohrer : “Atomically Flat LPE-Grown Facets Seen by Scanning Tunneling Microscopy”, Priority Communication in J. Crystal Growth 60 (1982) p. 199-202.
  31. H. J. Scheel, “Developments in Crystal Growth from High-Temperature Solutions”, Progress in Crystal Growth and Characterization 5 (1982) p. 277-290.
  32. M. Matsuoka, M.A. Aegerter, M.C. Terrile, H.C. Panepucci, J.S.Helman, and H. J. Scheel : “Evidence for the Magnetic Franck-Condon Effect in a System of an Interstitial Magnetic Impurity in an Antiferromagnetic Matrix : Cr4+ in GdAlO3” Phys. Rev. Lett. 50 (1983) No. 3, p. 204-207.
  33. H. J. Scheel and J. Sommerauer : “Crystal Growth and Characterization of ‘Striation-Free’ KTa1-xNbxO3 (x=0.26) Solid Solutions”, J. Crystal Growth 62 (1983) p. 291-298.
  34. A. Okazaki, N. Ohama, B. T. M. Willis, Y. Iwata, K. A. Müller, and H. J. Scheel : “Time-Dependant Strains near the 105 K Transition in SrTiO3” Phase Transitions 3 (1983) p. 339-349.
  35. H. J. Scheel and P. Günter : “Oxide Solid Solutions, Crystal Growth and Applications”, Invited lecture at ICCG-7, J. Crystal Growth 65 (1983) p. 541-542.
  36. H. J. Scheel and P. Günter : “Crystal Growth and Electro-Optic Properties of Oxide Solid Solutions”, Invited lecture at ISSCG-5, Davos, Switzerland, September 3-10, (1983), in “Crystal Growth of Electronic Materials”, Editor E.Kaldis, Elsevier, Amsterdam 1985, Chapter 12, p. 149-157.
  37. H. J. Scheel : “Multilayer Liquid Phase Epitaxy - Problems and Results” in “Optoelectronic Materials and Devices”, Editor M.A. Herman, Polish Scientific Publishers PWN (1983), p. 191-192.
  38. V. S. Bagnato, L. E. 0. Nunes, S. C. Zilio, J. C. Castro, and H. J. Scheel: “Infrared Electronic Transitions of Eu 3+ in GdAlO3 ”,Solid State Comm. 49 (1984) p. 27-30.
  39. P. H. O. Rappl, L. F. Matteo Ferraz, M.R.X. Barros, D. Schiel, and H. J. Scheel: “Hydrodynamic Simulation of Forced Convection in Czochralski Melts”, J. Crystal Growth 70 (1984) p. 49-55.
  40. H. J. Scheel and J.T. Sielawa: “Optimum Convection Conditions for Czochralski Growth of Semiconductors”, (International Symposium on High-Purity Materials, Dresden GDR May 6-10, 1985) ; Proceedings p. 232-244.
  41. H. J. Scheel, “The Accelerated Crucible Rotation Technique” in the series “Milestones in Crystal Growth”, American Association for Crystal Growth Newsletter 15 (1985) No. 3, p. 2-3 and cover photographs.
  42. H. J. Scheel, “Atomically Flat Surfaces and p-n Junctions of GaAs by LPE”, E-MRS Strasbourg (June 2-5, 1987) Proceedings / Editions de Physique XIV (1987) p. 175-184.
  43. H. J. Scheel and F. Licci : “Crystal Growth of YBa2Cu3O7-x ”, J. Crystal Growth 85 (1987) p. 607-614.
  44. H. J. Scheel and F. Licci : “Growth of Separated YBa2Cu3O7-X Crystals”, MRS Boston Fall 1987 Symp. Vol. 99 (1988) p. 595-599.
  45. H. J. Scheel, F. Licci and T. Besagni : “Approach to Growth of Free Crystals of YBCO”, Physica C 153-155 (1988) p. 431-432.
  46. H. J. Scheel : “Crystal Growth Problems of YBa2Cu3O7-x ”, Physica C 153-155 (1988) p. 44-49.
  47. H. J. Scheel, F. Licci, T. Besagni, F. Bolzoni, S. Cattani, D. Eckert and G. Salviati : “Effect of Cation Non-Stoichiometry and of Process Parameters on Properties of YBCO”, (E-MRS Conf. Strasbourg June 1988), Mat. Sci. and Engng. A 109 (1988) p. 299~-305.
  48. H. J. Scheel and F. Licci : “Crystal Growth of High Temperature Superconductors”, Mat. Res. Soc. Bulletin, 13 (1988) p. 56-60.
  49. H. J. Scheel and P. Niedermann : “Growth Mechanisms of YBa2Cu3O7-X Platelet Crystals”, J. Crystal Growth 94 (1989) p. 281-284.
  50. H. J. Scheel, W. Sadowski and L. Schellenberg : “Crucible Corrosion in Crystal Growth of YBa2Cu3O7-x ” Superconductor Science & Technol. 2 (1989) p. 17-21.
  51. H. J. Scheel, D. Shaltiel, H. Bill, P. Fischer, M. Francois, H. Hagemann, M. Peter, Y. Ravi Sekhar, W. Sadowski, G. Triscone, E. Walker, K. Yvon “Single Crystal ESR Studies on Tetragonal YBa2Cu3O6+x”, Physica C 158 (1989) p. 424-432.
  52. P. Niedermann, W. Sadowski, and H. J. Scheel: “Scanning Tunneling Microscope Investigation of (100) and (001) Faces of YBa2Cu3O7-d”, J. Appl. Phys. 65 (1989) p. 3274-3276.
  53. R. Boutellier, B.N. Sun, H. J. Scheel, and H. Schmid : “Flux Separation in Crystal Growth of YBa2Cu3O7-x ”, J. Crystal Growth 69 (1989) p. 465-467.
  54. H. J. Scheel, “Crystal Growth of Oxide Superconductors” (E-MRS Conf. Strasbourg Nov. 1988), J. Less Common Metals / Special Issue 151 (1989) p. 199-211.
  55. H. J. Scheel, F. Licci and P. Tissot : “Data on the Phase Diagram YBa2Cu3O7-x -CuOx”, (E-MRS Conf. Strasbourg Nov. 1988), J. Less Common Metals / Special Issue 150 (1989) p. 201-206.
  56. M. Francois and H. J. Scheel : “Quantitative Detection of Secondary Phases in YBa2Cu3O7-x ”, (E-MRS Conf. Strasbourg Nov. 1988), J. Less Common Metals / Special Issue 150 (1989) p. 211-217.
  57. W. Sadowski and H. J. Scheel : “Reproducible Growth of Large Crystals of YBa2Cu3O7-x ”, (E-MRS Conf. Strasbourg Nov. 1988), J. Less Common Metals / Special Issue 150 (1989) p. 219-227.
  58. F. Licci, T. Besagni, F. Bolzoni, S. Cattani, and H. J. Scheel : “High-Tc Superconductor Materials Development at MASPEC Institute”, Vuoto (1989) p. 234-240.
  59. J.O. Fossum, K. Fossheim, and H. J. Scheel : “Ultrasonic Investigation of the Phase Transition in Flux-Grown SrTiO3”, Solid State Commun. 51 (1984) p. 839-844.
  60. H. J. Scheel and F. Licci : “Phase Diagrams and Crystal Growth of Oxide Superconductors”, Thermochim. Acta (invited review) 174 (1991)p. 115-130.
  61. P. Niedermann, A.P. Grande, J.K. Grepstad, J.-M. Triscone, M.G. Karkut, O. Brunner, L. Antognazza, W. Sadowski, H. J. Scheel, andO. Fischer “X-Ray Photoelectron Spectroscopy Study of Thin Ag Overlayers on YBa2Cu3O7-x: Effects of Oxygen Annealing”, J. Appl. Phys. 68 No. 4 (1990) p. 1777-1781.
  62. B. Barbiellini, P. Genoud, J.Y. Henri, L. Hoffmann, T. Jarlborg, A.A. Manuel, S. Massidda, M. Peter, W. Sadowski, H. J. Scheel, A. Shukla, A.K. Singh and E. Walker : “Positron Annihilation on Single Crystals of YBa2Cu3O7-X”, Phys. Rev. B 43 No 10 (1991) p. 7810-7825.
  63. F. Licci, H. J. Scheel, and P. Tissot : “Determination of the Eutectic Composition by Crystal Growth and Flux Separation : Example BaCuO2-CuOx”, J. Crystal Growth 112 (1991) p. 600-605.
  64. F. Licci, C. Frigeri, and H. J. Scheel : “Effect of flux composition on crucible corrosion and aluminum distribution coefficient in YBCO single crystals”, J. Crystal Growth 112 (1991) p. 606-610.
  65. H. J. Scheel, M. Berkowski and B. Chabot : “Problems in Epitaxial Growth of High-Tc Superconductors”, Proceedings of 7th Internat. Conf. Vapor Growth and Epitaxy, Nagoya 14-17 July 1991, and J. Crystal Growth 115 (1991) p. 19-30.
  66. H. J. Scheel, M. Berkowski and B. Chabot : “Substrates for High-Temperature Superconductors”, 3rd Int. Conf. on Materials and Mechanisms of Superconductivity / High-Temperature Superconductivity, July 22-26, 1991 at Kanazawa, Japan, Proceedings and Physica C 185-189 (1991) p. 2095-2096.
  67. F. Licci, T. Besagni, C. Frigeri, C. Paris, F. Aquilano, and H. J. Scheel: “Crystal growth of 90K YBCO from Alumina Crucibles : Control of Crucible Corrosion and Crystal Contamination”, Proceedings 3rd European Conf. Crystal Growth, Budapest May 5-11, 1991.
  68. M. Berkowski, P. Bowen, T. Liechti, and H. J. Scheel : “Plasma-sprayed Yttria Layers for Corrosion Resistance”, J. Amer. Ceram. Soc. 75 (1992)p.1005-1007.
  69. W. Marti, F. Altorfer, P. Fischer, and H. J. Scheel : “Thermal Expansion Coefficients of NdBa2Cu3O7-d”, Physica C 206 (1993) p. 158-162.
  70. C. Klemenz and H. J. Scheel : “LPE of High-Tc Superconductors”, presented at the 10th Internat. Confer. on Crystal Growth August 16-21, 1992 at San Diego Calif. ; J. Crystal Growth 129 (1993) p. 421-428.
  71. A. Podlesnyak, S. Rosenkranz, F. Fauth, W. Marti, A. Furrer, A. Mirmelstein, and H. J. Scheel : “Crystal field and magnetic properties of the distorted perovskite NdGaO3”, J. Phys.: Condens. Matter 5 (1993) p. 8973-8982.
  72. 3 chapters in the book No. 3:
    1. “History of crystal growth” p.1-63
    2. “Flame-fusion growth of sapphire, ruby and SrTiO3” p. 147-167,
    3. “Developments in crystal growth from high-temperature solutions” p. 169-181.
  73. W. Marti, P. Fischer, F. Altorfer, M. Tardin, and H. J. Scheel: “Crystal structures and phase transitions of orthorhombic and rhombohedral RGaO3 (R=La, Pr, Nd) investigated by neutron powder diffraction”, J. Phys. : Condens. Matter 6 (1994) p. 127-135.
  74. A. Podlesnyak, S. Rosenkranz, F. Fauth, W. Marti, A. Furrer, and H. J. Scheel: “Crystal field levels in the distorted perovskite PrGaO3” J. Phys. : Condens. Matter 6 (1994) p. 4099-4106.
  75. H. J. Scheel, “Problems in Epitaxial Growth of High-Tc Superconductors”, in Advances in Superconductivity VI, editors T. Fujita and Y. Shiohara, Springer-Verlag, Tokyo 1994, p. 29-36.
  76. “Historical Introduction”, Chapter 1 of Volume I of the “Handbook of Crystal Growth” (3 volumes 1993-1995), editor D.T.J. Hurle, Elsevier / North Holland Science Publishers, Amsterdam 1993, pp. 1-42.
  77. A. A. Chernov and H. J. Scheel : “Extremely flat surfaces by liquid phase epitaxy”, J. Crystal Growth 149 (1995) 187-195.
  78. P. Holba and H. J. Scheel: “Discussion of the Primary Crystallization of YBa2Cu3O7-x ”, J. Crystal Growth, submitted.
  79. H. J. Scheel, C. Klemenz, F.-K. Reinhart, H. P. Lang and H.-J. Giinterodt “Monosteps on extremely flat LPE-grown surfaces of YBa2Cu3O7-x”, Appl. Phys. Lett. 65 (1994) p. 901-903.
  80. D. C. Dube, I. Reaney, M. Daglish, N. Setter, and H. J. Scheel : “Dielectric properties of lanthanum gallate (LaGaO3) crystal”, J. Appl. Phys. 75 (1994) 4126-4130.
  81. H. J. Scheel : “Materials Engineering Problems in Crystal Growth and Epitaxy of Cuprate Superconductors”, Mater. Res. Bull. 19 (September 1994) p. 26-32.
  82. C. Klemenz and H. J. Scheel : “Flat YBCO layers for planar tunnel-device technology”, Physica C 265 (1996) 126-134.
  83. T. Nishinaga and H. J. Scheel : “Crystal growth aspects of high-Tc superconductors”, Proceedings ISS'95, Advances in Superconductivity, VIII Vol.1, editors H. Hayakawa, and Y. Enomoto, Springer, Tokyo 1996, 33-38.
  84. L. Kavan, M. Grätzel, S.E. Gilbert, C. Klemenz and H. J. Scheel “Electrochemical and Photoelectrochemical Investigation of Single Crystal Anatase”, J. Amer. Chem. Soc. 118 No. 28 (1996) 6716-6723.
  85. M. Mukaida, S. Miyazawa, C. Klemenz, and H. J. Scheel : “Structural characterization of a-axis oriented YBa2Cu3Ox films grown by liquid phase epitaxy”, J. Crystal Growth 169 (1996) 715-721.
  86. I. Utke, C. Klemenz, H. J. Scheel, M. Sasaura, S. Miyazawa : “Misfit problems in epitaxy of high-Tc superconductors”, oral presentation at Ninth Internat. Conf. on Vapor Growth and Epitaxy, Vail / Colorado, J. Crystal Growth 174 (1997) 806-812.
  87. I. Utke, C. Klemenz, H. J. Scheel, and P. Nüesch : “High-temperature X-ray measurements of gallates and cuprates”, poster presentation at Ninth Internat. Conf. on Vapor Growth and Epitaxy, Vail / Colorado, J. Crystal Growth 174 (1997)813-820.
  88. H. J. Scheel and C. Klemenz : “Growth modes and perfection of epitaxial GaN layers”, Proceedings of “Ill-V Nitride Materials and Processes”, 189th Electrochemical Society Meeting, Los Angeles May 5-10, 1996, Vol. 96-11, editors T.D. Moustakas, J. P. Dismukes, and S. J. Pearton, (1996)20-36.
  89. H. J. Scheel : “Control of Epitaxial Growth Modes for High-Performance Optoelectronic Devices”, Proceedings of International Symposium on Laser and Nonlinear Optical Materials Singapore 1997, editor T.Sasaki, Data Storage Institute Singapore 1997, 10-18.
  90. C. Klemenz, I. Utke and H. J. Scheel : “Film Orientation, Growth Parameters and Growth Modes in Epitaxy of YBa2Cu3Ox ”, J. Crystal Growth 204 (1999)62-68.
  91. C. Klemenz and H. J. Scheel, “Solubility of YBa2Cu3O7-d and Nd1+xBa2-xCu3O7±d in the BaO/CuO flux”, J. Crystal Growth 200 (1999)435-440.
  92. C. Klemenz and H. J. Scheel, “Growth and properties of Nd1+xBa2-xCu3O7±d whiskers and needle-like crystals”, J. Crystal Growth 203 (1999)534-539.
  93. C. Klemenz, I. Utke and H. J. Scheel, “Defects on YBCO films grown by liquid-phase epitaxy on NdGaO3”, J. Crystal Growth 207 (1999)62-68.
  94. H. J. Scheel, “Historical Aspects of Crystal Growth Technology”,Proceedings 11th American Conf. Crystal Growth & Epitaxy ACCGE-11 (Tucson AZ August 1-6, 1999) and J. Crystal Growth 211(2000) 1-12.
  95. C. Klemenz and H. J. Scheel, “Crystal Growth and Liquid-Phase Epitaxy of Gallium Nitride”, Proceedings ACCGE-11 and J. Crystal Growth 211 (2000) 62-67.
  96. K.A. Soubbotin, E.V. Zharikov, G.M. Kouzmicheva, S.V. Lavrishchev, V.A. Smirnov, H. J. Scheel and I.A. Shcherbakov, “Single crystals of monticellite, activated with chromium and erbium ions, CaMgSiO4:Cr, Er as an active medium for solid state lasers”, Advanced Materials 4(1998)56-61.
  97. K. A. Soubbotin, V.A. Smirnov, I.A. Shcherbokov, E.V. Zharikov, S.V. Kovalov, H. J. Scheel, “Spectroscopic investigations of chromium doped calcium tetragermanate single crystals” in ICONO'98; Fundamental aspects of Laser-Matter Interaction and New Nonlinear Optical Materials and Physics of Low-Dimensional Structures, editors K.N. Drabovich, V.I. Emel'yanov and V.A. Makarov, Proceedings of SPIE Vol. 3734(1999)404-407.
  98. K.A. Soubbotin, V.A. Smirnov, S.V. Kovalov, H. J. Scheel, E.V. Zharikov, “Growth and Spectrosopic Investigation of New Promising Laser Crystal Chromium (IV) Doped Germanoeucryptite Cr4+:LiAlGeO4”, Optical Materials 13(2000)405-410.
  99. H. J. Scheel, R.H. Swendsen, “Evaluation of experimental parameters for growth of homogeneous solid solutions”, J. Crystal Growth 233(2001)609–617.
  100. 3 Chapters of H. J. Scheel in “Crystal Growth Technology”, editors H. J. Scheel and T. Fukuda, Wiley and Sons, Chichester UK, 2003 hardcover, 2004 paperback:
    Ch. 1: The Development of Crystal Growth Technology (p. 3-14)
  101. 3 Chapters of H. J. Scheel in “Crystal Growth Technology”, editors H. J. Scheel and T. Fukuda, Wiley and Sons, Chichester UK, 2003 hardcover, 2004 paperback:
    Ch. 4: Theoretical and Experimental Solutions of the Striation Problem (p.69-91) ;
  102. 3 Chapters of H. J. Scheel in “Crystal Growth Technology”, editors H. J. Scheel and T. Fukuda, Wiley and Sons, Chichester UK, 2003 hardcover, 2004 paperback:
    Ch. 28: Control of Epitaxial Growth Modes for High-Performance Devices (p. 623-644).
  103. H. J. Scheel, “Theory and technology of growing striation-free crystals”, J. of Korean Crystal Growth and Crystal Technology 14 No.4 (2004)174-186.
  104. H. J. Scheel, “Crystal growth technology CGT for energy: saving energy and renewable energy”, J. Crystal Growth 275(2005)331-337.
  105. H. J. Scheel, “Theoretical and technological solutions of the striation problem”, J. Crystal Growth 287(2006)214-223.
  106. H. J. Scheel, “Introduction to Liquid Phase Epitaxy”, chapter 1 in “Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials”, editors P. Capper and M. Mauk, Wiley & Sons, Chichester UK (2007), 1-19.
  107. H. J. Scheel and D. Elwell, “Liquid Phase Epitaxy of Gallium Nitride”, Chapter 7 in “Liquid Phase Epitaxy of Electronic, Optical and Optoelectronic Materials”, editors P. Capper and M. Mauk, Wiley & Sons, Chichester UK (2007), 203-225.
  108. H. J. Scheel, Foreword for “Crystal Growth Technology – Semiconductors and Dielectrics“, editors P. Capper and P. Rudolph, Wiley-VCh 2010.
  109. Patent application Japan 2013-23131 for Tsunami barriers, February 8, 2013
  110. Patent application Europe 13162698.8 for Tsunami barriers, April 8, 2013
  111. Patent application USA 13/861.608 for Tsunami barriers, April 12, 2013
  112. “The Technology of Single Crystals and Epitaxial Layers; The Case for Energy, Water, Health, Education and Security”, A White Paper 15. April 2013 prepared by Dr. Frank J. Bruni and Dr.-Ing. Hans J. Scheel
  113. “Novel Approach to Tsunami, Flooding Barriers”, Hans J. Scheel, in SEA TECHNOLOGY (December 2013), page 81 (Soapbox).
  114. “New Type of Tsunami Barriers”, Hans J. Scheel, in NATURAL HAZARDS, Journal of the International Society for the Prevention and Mitigation of Natural Hazards (Springer) 70 (2014) pages 951-956.
  115. “Tidal Energy and Large-Scale Fish Farming, Benefits of Novel Tsunami and Flooding Barriers”, Hans J. Scheel, in INTERNATIONAL JOURNAL OF ENVIRONMENTAL SCIENCE AND DEVELOPMENT 5 No.5 (October 2014) pages 484- 490.
  116. “Novel Tsunami Barriers and their Applications for Hydroelectric Energy Storage, Fish Farming, and for Land Reclamation”, Hans J. Scheel, in SCIENCE OF TSUNAMI HAZARDS, Journal of Tsunami Society International 33 No. 3 (2014) pages 170-192.

Invited Lectures and Seminars

  1. October 14, 1970 :
    «Crystal Growth from High-Temperature Solutions», Conference of the German Crystal Growth Society, Munich, Germany.
  2. February 12, 1971 :
    «Kristallisation von Sulfiden aus Schmelzlösungen», Inst. of Inorganic Chemistry of University, Zurich, Switzerland.
  3. May 5, 1971 :
    «Crystal Growth from High-Temperature Solutions», RCA Research Center, Princeton, N.J., USA.
  4. May 20, 1971 :
    «Crystal Growth from High-Temperature Solutions», Air Force Cambridge Research Laboratories, Cambridge, Mass., USA.
  5. May 16, 1971 :
    «Kristallzüchtung aus Schmelzlösungen», Brown Boveri & Co. Research Center, Daettwil, Switzerland.
  6. June 20, 1971 :
    «Die Rolle des Stoff transports bei der Kristallisation aus Hochtemperaturlösungen», Lab. for Chemical Engineering, ETH Zurich, Switzerland.
  7. October 30, 1972 :
    «Moderne Aspekte der Kristallsynthese» Inst. of Crystallography & Mineralogy of University, Vienna, Austria.
  8. December 29, 1972 :
    «Accelerated Crucible Rotation Technique in Crystal Growth», Technion, Israel Inst. of Technology, Dept. of Physics, Haifa, Israel.
  9. January 4, 1973 :
    «Recent Developments in Flux Growth», Invited Opening Lecture Israel Crystal Growth Conference, Ramat-Gan, Israel.
  10. April 30, 1973 :
    «Moderne Aspekte der Kristallzüchtung», Institute of Mineralogy, University, Münster, Germany.
  11. May 3, 1973 :
    «Crystal Growth from High-Temperature Solutions (Flux Growth)», Dutch Crystal Growth Course, Noordwijkerhout, Netherlands.
  12. January 18, 1974 :
    «Kristallzüchtung aus Hochtemperaturlösungen», Physics & Crystallography Institutes of University, Freiburg i. Br., Germany.
  13. April 23, 1974 :
    «Crystal Growth from High-Temperature Solutions», Laboratoire des Rayons X, CNRS, Grenoble, France.
  14. July 8, 1974 :
    «Recent Developments in the Accelerated Crucible Rotation Technique», Gordon Research Conference on Crystal Growth, Andover, N.H., USA.
  15. June 20, 1975 :
    «Stirring in Crystal Growth at High-Temperature», Reunion Scient. de Groupe Franc. de Croissance de Cristaux, Bex VS, Switzerland.
  16. July 8, 1975 :
    «Crystal Growth at the IBM Zurich Research Laboratory», IBM San Jose Research Lab., San Jose, Calif., USA.
  17. July 13, 1975:
    «ACRT Solution Stirring», ACCG-III (3rd American Conference on Crystal Growth), Stanford, Calif., USA.
  18. July 18, 1975:
    «Crystallization of Sulfides from Alkali-Polysulfide Flux» and «Flame-Fusion Growth of Strontium-Titanate», Lawrence Livermore Lab., University of California, Livermore, Calif., USA.
  19. August 24, 1975 :
    «History of Crystal Growth», Annual British Conf. on Crystal Growth, Edinburgh, Great Britain.
  20. October 4, 1975 :
    «SrTiO3-Einkristalle aus Verneuil und Flux», Swiss Physical Society & Crystallographic Soc. Annual Meeting, Aarau, Switzerland.
  21. June 14, 1976 :
    «Kristallzüchtung aus Hochtemperaturlösungen», Zentralinst. fur Elektronenphysik, Akademie der Wissenschaften, Berlin, German Democratic Republic.
  22. June 16, 1976 :
    «Kristallzüchtung im IBM Forschungslaboratorium Zurich», Zentralinst. f. Festkorperphysik, Akademie der Wissenschaften, Jena, German Democratic Republic.
  23. July 11, 1997 :
    «Preparation of Multilayer Devices by LPE ?», IBM Research Center, Yorktown Heights, USA.
  24. July 17, 1977 :
    «A New Technique for Multilayer LPE», 5th International Conference on Crystal Growth, Boston, USA.
  25. August 8, 1977 :
    «A New Technique for Multilayer Liquid-Phase Epitaxy», Max-Planck Institut for Solid State Research Stuttgart, Germany.
  26. November 7, 1977:
    «The Accelerated Crucible Rotation Technique (ACRT)», 6eme ColI., Groupe Française de Croissance Cristalline, Le Mans, France.
  27. February 3, 1978 :
    «Crystal Growth in the IBM Zurich Laboratory», Institute of Crystallography, ETH, Zurich, Switzerland.
  28. March 30, 1978 :
    «Recent Developments in Crystal Growth from High-Temperature Solutions», Joint Italo-Swiss Meeting on Crystallography, Trento, Italy.
  29. May 5, 1978 :
    «Crystallization and Characterization of Strontium Titanate», 5th IntI. Symp. on High-Purity Materials, Dresden, German Democratic Republic.
  30. June 24, 1980 :
    «Crystal Growth from High-Temperature Solutions», Dept. de Materiaux at the EPF Lausanne, Lausanne, Switzerland.
  31. September 17, 1980 :
    «Recent Developments in Crystal Growth from High-Temperature Solutions», 4th Intl. Specialists School on Crystal Growth ISSCG-4, Suzdal, USSR.
  32. June 24, 1980 :
    «Crystal Growth from High-Temperature Solutions», Lab. f. Chern. & Mineralog. Kristallograph. of University, Berne, Switzerland.
  33. February 2, 1981 :
    «Crystal Growth from High-Temperature Solutions», Chemistry Department at the University, Geneva, Switzerland.
  34. March 9, 1981 :
    «The Accelerated Crucible Rotation Technique (ACRT) in Crystal Growth», EUROMECH, European Mech. Coll. No 138, Karlsruhe, Germany.
  35. March 31, 1981 :
    «Crystal Growth of Perovskite Solid Solutions», Coll.: Croissance Crist. et Materiaux de Haute Temp., Grenoble, France.
  36. May 16, 1981 :
    «Crystal Growth of Perovskite Solid Solutions», Lab. de Dielectrique, Faculté des Sciences, Dijon, France.
  37. September 14, 1981 :
    «Multi LPE, A New Technique for Production of Flat and Homogeneous III-V Multilayers», International School on Semiconductor Optoelectronics, Cetniewo, Poland.
  38. January 26, 1982 :
    «Crystal Growth of Homogeneous Solid Solutions», Institute of Solid State Research, Nuclear Center KFA, Jülich, Germany.
  39. May 25, 1982
    «Crystal Growth of Homogeneous Solid Solutions», Instituto de Fisica, PUC, Rio de Janeiro, Brazil.
  40. May 28,1982 :
    «The Accelerated Crucible Rotation Technique in Crystal Growth», CBPF-Centro Brasileiro de Pesquisas Fisicas, Rio de Janeiro, Brazil.
  41. June 7, 1982 :
    «The Accelerated Crucible Rotation Technique in Crystal Growth», Politecnica-USP, University of Sao Paulo, Sao Paulo, Brazil.
  42. June 8, 1982 :
    «The Accelerated Crucible Rotation Technique in Crystal Growth», IPEN, Institute of Nuclear Energy Research, Sao Paulo, Brazil.
  43. June 9, 1982 :
    «Multilayers and Atomically Flat Surfaces by Liquid Phase Epitaxy LPE», IPEN, Sao Paulo, Brazil.
  44. June 16, 1982 :
    «The Accelerated Crucible Rotation Technique in Crystal Growth», IFQSC-USP, Institute of Physics and Chemistry of the University of Sao Paulo at Sao Carlos, SP, Brazil.
  45. June 17, 1982 :
    «Multilayers and Atomically Flat Surfaces by Liquid Phase Epitaxy LPE», IFQSC-USP, Sao Carlos, SP, Brazil.
  46. June 18, 1982 :
    «Crystal Growth of Homogeneous Solid Solutions», IFQSC-USP, Sao Carlos, SP, Brazil.
  47. June 22, 1982 :
    «Multilayers and Atomically Flat Surfaces by LPE», Physics Department, UFMG, Federal University of Minas Geraes, Belo Hoizonte, MG, Brazil.
  48. June 25, 1982 :
    «The Accelerated Crucible Rotation Technique in Crystal Growth», Physics Dept., UFPE, Federal University of Pernambuco, Recife, PE, Brazil.
  49. June 30, 1982 :
    «Multilayers and Atomically Flat Surfaces by LPE», INPE, National Institute for Space Research, Sao Jose dos Campos, SP, Brazil.
  50. July 11-16, 1982 :
    «Crystal Growth and Characterization of Homogeneous Solid Solutions», Invited Lecture at the Gordon Research Conference on Crystal Growth, Plymouth N.H. USA.
  51. November 15,1982 :
    «Crystal Growth of Homogeneous Solid Solutions», Max-Planck Institute of Solid State Research, Stuttgart, Germany.
  52. June 7, 1983:
    «Crystal Growth of Homogeneous Solid Solutions», Physics Department, UFRS, Federal University of Rio Grande do Sul, Porto Alegre, RS, Brazil.
  53. –
  54. July 19, 1983 :
    «The Role of Crystal Growth in Materials Science» & «Multilayers and Atomically Flat Surfaces by MultiLPE», International School on Teaching Crystallography for Materials Science-UNICAMP, Campinas, SP, Brazil.
  55. September 10, 1983 :
    «Crystal Growth of Homogeneous Solid Solutions», 5th International School on Crystal Growth ISSCG-5, Davos GR, Switzerland.
  56. September 11-16, 1983 :
    «Oxide Solid Solutions, Crystal Growth and Applications», 7th International Conference on Crystal Growth ICCG-7, Stuttgart, Germany.
  57. November 11, 1983 :
    «Homogene Mischkristalle: Kristallzüchtung und Anwendungen», Physics Department, University, Karlsruhe, Germany.
  58. November 14, 1983 :
    «Mu1tilayers and Atomically Flat Surfaces: Example GaAs», Chemistry Dept. of University, Geneva, Switzerland.
  59. –
  60. October 21, 1983 :
    «The Accelerated Crucible Rotation Technique in Czochralski Growth», & «Multilayer Structures & Atomically Flat Surfaces by Liquid Phase Epitaxy», Institute of Solid-State Research, Nuclear Research Center KFA, Jülich, Germany.
  61. January 16, 1984:
    «Mu1tischichten und atomar g1atte Oberflächen mit Flüssigphasenepitaxie», Physics Department, University, Regensburg, Germany.
  62. May 6-10, 1984 :
    «Optimum Convection Conditions for Czochralski Growth of Semiconductors», 6th Internat. Symposium on «High-Purity Materials in Science and Technology», Dresden, German Democratic Republic.
  63. May 14-17,1985 :
    «Inert Working Atmospheres», American Association for Crystal Growth Workshop on «Purification of Materials for Crystal Growth and Glass Processing», Pajaro Dunes / Watsonville, Calif., USA.
  64. January 13-24, 1986 :
    «Fundamental Aspects of Liquid Phase Epitaxy»,
  65. «Atomically Flat Surfaces and Superlattices by LPE» and
  66. «Segregation Problems in LPE & in Growth of Solid Solution Substrate Crystals», 3 lectures at the Winter School in Technology, Characterization and Properties of Epitaxial Electronic Materiels, Trieste, Italy.
  67. October 9, 1986 :
    «GaAs-Multischichten und atomar glatte Oberflächen mit Flüssigphasenepitaxie», Institut fUr Hochfrequenztechnik, TH Darmstadt, Germany.
  68. January 28, 1987 :
    «Neue Aspekte der Czochralski-Hydrodynamik», Gießerei-Institut RWTH Aachen, Germany.
  69. March 26-27, 1987 :
    «Alternative Verfahren zur Herstellung von GaAs-Kristallen», DGKK-;Arbeitskreis GaAs-InP, Universitat Erlangen, Germany.
  70. May 15, 1987 :
    «Atomar glatte Oberflächen und p-n-Übergänge von GaAs mittels Flüssigphasenepitaxie», Siemens Forschungslaboratorium, Erlangen, Germany.
  71. June 2-5, 1987 :
    «Atomically Flat Surfaces and p-n-Junctions of GaAs by LPE», Meeting of European Materials Research Society, Strasbourg, France.
  72. September 22, 1987 :
    «Crystal Growth of High-Tc Superconductors and of SrTiO3 Substrate Crystals», Dept. of Physics, University of Geneva, Switzerland.
  73. October 12, 1987 :
    «Crystal Growth of High-Tc Superconductors and of SrTiO3 Substrate Crystals», Institute für Festkörperforschung, Kernforschungsanlage KFA Jülich, Germany.
  74. November 23, 1987 :
    «High-Temperature Superconductivity «HTSC» : Potential and Problems», Institute MASPEC-CNR, Parma, Italy.
  75. December 9, 1987 :
    «Crystal Growth Problems of YBa2Cu3O7-X», AT&T Bell Laboratories, Murray Hill N.J., USA.
  76. December 18, 1987 :
    «Crystal Growth Problems of YBa2Cu3O7-X», Hughes Research Laboratories, Malibu Calif., USA.
  77. January 25, 1988 :–
  78. –
  79. –
  80. –
  81. –
  82. January 29, 1988 :
    «The Role of Hydrodynamics in Crystal Growth from High-Temperature Solutions» and «Crystal Growth of Homogeneous «Striations-Free» Solid Solutions: KTa1-X NbxO3 'KTN' etc.» and «Czochralski Hydrodynamics: Classical & Novel Aspects» and «Atomically Flat Surfaces and p-n-lunctions in LPE-grown GaAs» and «Crystal Growth of SrTiO3 and of High-Temperature Superconductors» and «Crystal Growth Problems and Expectations» at the International School on «Crystal Growth and Characterization of Advanced Materials for Solid State Applications»-Crystal Growth Center, ANNA University, Madras, India.
  83. February 28 -March 4, 1988 :
    «Crystal Growth Problems of YBa2Cu3O7-X», First Internat. Confer. on High Temperature Superconductors and Materials and Mechanisms of Superconductivity, Interlaken/Switzerland.
  84. July 4-9, 1988 :
    «Crystal Growth Problems of High-Tc Superconductors», Summer School on High Temperature Superconductors, EI Escorial/Spain.
  85. November 8-10, 1988 :
    «Crystal Growth of Oxide Superconductors», Sympos. on High-Temperature Superconductors at the European MRS Fall Conference, Strasbourg/France.
  86. April 3-5, 1989 :
    «Phase Diagrams and Crystal Growth of Oxide Superconductors», German-Italian Crystal Growth Conference, Parma/Italy.
  87. September 30 -October 4, 1989 :
    «Crystal Growth Problems of Oxide Superconductors», European Confer. on High-Tc Thin Films and Single Crystals, Ustron/Poland (opening lecture).
  88. October 4-5, 1989 :
    «Phase Diagrams for Crystal Growth of Oxide Superconductors», Symposium «High-Tc Superconductors -Thermodynamics and Phase Stability» of the Metallurgical Society, Indianapolis INIUSA (opening lecture).
  89. August 20-25, 1989 :
    «General Aspects of Growth of Superconductor Oxide Crystals», 9th Internat. Confer. on Crystal Growth, Sendai/Japan.
  90. March 7-9, 1990 :
    «Kristallzüchtung von Hoch-Tc Supraleitern», German Crystal Growth Conference and Symposium on High-Tc Superconductors, Frankfurt/Germany.
  91. April 1-7, 1990 :
    «Epitaxy Problems of High-Tc Superconductors», EPI-l First European Confer. on Epitaxial Crystal Growth, Budapest/Hungary.
  92. September 18-21, 1990 :
    «Epitaxial Films of High-Tc Superconductors», 21st Anniversary Confer. British Assoc. of Crystal Growth, Birmingham/England.
  93. July 14-17, 1991 :
    «Problems in Epitaxial Growth of High-Tc Superconductors», 7th Internat. Confer. on Vapour Growth and Epitaxy, Nagoya/Japan (Special lecture as honorary guest of the conference).
  94. August 16-21, 1992 :
    «Substrates for High-Tc Superconductors», 10th Internat. Confer. on Crystal Growth, San Diego, USA.
  95. November 30 -December 4, 1992 :
    «Current State of HTSC Crystal Growth», Symposium on «Superconductivity : Materials and Properties» at the MRS Fall Meeting, Boston, USA.
  96. March 22-26, 1993 :
    «Epitaxie von Hoch-Tc Supraleitern» ; «Strategien fur optimale Czochralski-Technologie», Annual German Crystal Growth Conference, Berlin/Germany.
  97. October 26-29, 1993 :
    «Problems in Epitaxial Growth of High-Tc Superconductors», 6th Internat. Sympos. on Superconductivity, Hiroshima/Japan (Plenary lecture).
  98. February 23, 1994 :
    «Epitaxial Films and Surfaces of Semiconductors and Superconductors», Institute of Physical High Technology, Jena / Germany.
  99. March 24, 1994 :
    «Crystal Growth of High-Tc Superconductors», National Research Institute on Inorganic Materials NIRIM, Tsukuba /Japan.
  100. March 26, 1994 :
    «Epitaxial Films and Surfaces of Semiconductors and Superconductors», Research Laboratory of Materials Engineering, Tokyo Institute of Technology, Japan.
  101. March 28-31,1994 :
    «Flow Control of Semiconductor Melts», Silicon Symposium at the Annual Meeting of the Japanese Society of Applied Physics, Meiji University, Kawasaki / Japan.
  102. April 12-13, 1994 :
    «Crystal Growth of High-Tc Superconductors» and «Epitaxial Films and Surfaces of Superconductors and Semiconductors», Materials Science Center, National Tsing Hua University, Hsinchu / Taiwan.
  103. June 24, 1994 :
    «Hydrodynamics in Crystal Growth», 2 lectures at Institute of Inorganic Chemistry, University of Berne, Switzerland.
  104. July 10-23, 1994 :
    «Crystal Growth of High-Tc Superconductors» and «Epitaxy of High-Tc Superconductors», NATO Advanced Study Institute on High-Temperature Superconductors-III, Porto Carras, Chalkidiki / Greece.
  105. July 24-29, 1994 :
    «Epitaxy of High-Tc Superconductors», 8th International Conference on Vapour Growth and Epitaxy ICVGE-8, Freiburg Br. / Germany.
  106. October 11, 1994 :
    «Epitaxy of High-Tc Superconductors», ISTEC Nagoya Division, Japan.
  107. October 19, 1994 :
    «Epitaxy of High-Tc Superconductors», ISTEC-Superconductor Research Laboratory, Tokyo / Japan.
  108. January 16, 1995 :
    «Control of Growth Modes in Epitaxy of Semiconductors and Superconductors», Hahn -Meitner -Institut, Berlin / Germany.
  109. February 6-16, 1995 : Opening lecture
    «Crystal Growth: History-Presence-Future» + 3 lectures: «Fundamental Aspects of Epitaxy of Semiconductors and Superconductors», «Striations in Optical Crystals: A Resolvable Problem», «Hydrodynamics of Czochralski Melts» , International School on Advanced Electronic Materials, Madras / India.
  110. February 14, 1995 :
    «Crystal Growth of High-Tc Superconductors», University of Rajasthan, Jaipur / India.
  111. May 8, 1995 :
    «Liquid Phase Epitaxy of GaAs»at Institute of Solar Energy Systems/Fraunhofer-Gesellschaft, Freiburg/Germany.
  112. May 12, 1995 :
    «Liquid Phase Epitaxy of High-Tc Superconductors» at the Symposium «Thin Films of High-Tc Superconductors» Katholieke Universiteit Leuven, Belgium.
  113. May 30,1995 :
    «Improved Epitaxy for High-Performance Optoelectronic Devices» at US Army Research Laboratory, Fort Monmouth NJ., USA.
  114. June 1, 1996 :
    «Epitaxy of High-Tc Superconductors» at the Faculty of Engineering, University of Utah, Salt Lake City, Utah, USA.
  115. June 4-7, 1995:
    «Epitaxy of High-Tc Superconductors», American Association for Crystal Growth-West Fourteenth Conference on Crystal Growth and Epitaxy, Stanford Sierra Camp, Fallen Leaf Lake, Calif. / USA.
  116. June 18-23, 1995 :
    «Control of Growth Modes in Epitaxy of High-Tc Superconductors», XI International Conference on Crystal Growth, The Hague / Netherlands.
  117. July 13,1995:
    «Epitaxy of HTS Layers» at German Workshop on Thick HTS Films for High-Current Applications, KfK, Karlsruhe / Germany.
  118. October 30 -November 2, 1995 :
    «Crystal Growth Aspects of High-Tc Superconductors», plenary lecture (with T. Nishinaga, Tokyo) at the 8th Internat. Sympos. on Superconductivity ISS'95, Hamamatsu, Shizuoka/Japan.
  119. May 5-10, 1996 :
    «Growth Modes and Perfection of Epitaxial GaN Layers», with C.Klemenz, 1st Sympos. on III-V Nitrides Materials and Device Processing, at the 189th Electrochem. Soc. Meeting, Los Angeles/USA.
  120. May 16-11, 1996 :
    «Striations -Free Crystals of Solid Solutions» at Material Science Center of National Tsing-Hua University, Hsinchu / Taiwan.
  121. May 18, 1996 :
    «Control of Growth Modes in Epitaxy» at the First Taiwan-Japan Symposium on Crystal Growth at National Central University, Chung-Li, Taiwan.
  122. May 20, 1996 :
    «Striations, a resolvable problem of crystal growth» at Shonan Institute of Technology, Tsujido/Fujisawa, Kanagawa, Japan.
  123. May 24, 1996 :
    «Growth modes and perfection of epitaxial GaN layers» at NTT LSI Laboratories, Atsugi, Japan.
  124. March 13-14, 1997 :
    «Striations, a Resolvable Problem» at 13th Japanese Melt Growth Meeting, Tohoku University, Sendai/Japan.
  125. April 7, 1997 :
    «Epitaxy of GaAs», Seminar Festkörperphysik at University Fribourg, Switzerland.
  126. September 22–
  127. September 24, 1997 :
    «Striations, a Resolvable Problem» and «Hydrodynamics of Czochralski Melts» at Second International Conference on Single Crystal Growth, Strength Problems, and Heat Mass Transfer, Obninsk, Russia.
  128. October 20, 1997 :
    «Crystallization Phenomena in and on Earth», Kolloquium at Mineralogical Institute, University of Bonn, Germany.
  129. October 22, 1997 :
    «Striations in Optical Crystals: A Resolvable Problem», Kolloquium at Institute of Crystallography, University of Cologne, Germany.
  130. November 3-5, 1997 :
    «Control of Epitaxial Growth Modes for High-Performance Optoelectronic Devices» at International Symposium on Laser and Nonlinear Optical Materials, Pan Pacific Hotel, Singapore.
  131. November 13-14, 1997 :
    «The Chances of Changed Research Directions : Personal View of 15 Years IBM Zurich Research» at 42nd Symposium on Synthetic Crystals of Japan, Sendai, Japan.
  132. June 1, 1998
  133. –
  134. June 5, 1998 :
    3 lectures on Crystal Growth and Epitaxy from Solutions : «Fundamentals of Growth from Solutions» (with C.Klemenz), «Practical Aspects of Growth from Aqueous Solutions and from High-Temperature Solutions», «Special Topics of Growth from Solutions», at the 10th International Summer School on Crystal Growth ISSCG-10, Rimini, Italy.
  135. September 5, 1998 –
  136. September 16, 1998 :
    2 lectures «Striations : an Intrinsic Problem ?» and «Control of Growth Modes in Epitaxy from the Vapor Phase and from the Liquid Phase» at First International School on Crystal Growth Technology ISCGT-1 at Beatenberg, Switzerland.
  137. November 25, 1998 :
    «Aspects of Crystal Growth Technology» VDI Verein Deutscher Ingenieure, Sektion Schweiz, at IMT, University of Neuchâtel, Switzerland.
  138. December 8, 1998 :
    «Control of Epitaxial Growth Modes for High-Performance Devices» Institute of Crystallography, University of Freiburg, Germany.
  139. March 8, 2017 :
    «50 Years Crystal Growth Technology» German-Swiss Conference on Crystal Growth, March 8-10 2017, Freiburg, Germany.